SIH4 DOPING OF MBE GAAS AND ALXGA1-XAS

被引:5
作者
BRIONES, F
GOLMAYO, D
GONZALEZ, L
DEMIGUEL, JL
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期
关键词
D O I
10.1116/1.583181
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:568 / 571
页数:4
相关论文
共 11 条
[1]   TEMPERATURE-DEPENDENCE OF THE GROWTH-RATE OF SILICON PREPARED THROUGH CHEMICAL VAPOR-DEPOSITION FROM SILANE [J].
BEERS, AM ;
BLOEM, J .
APPLIED PHYSICS LETTERS, 1982, 41 (02) :153-155
[2]   KINETICS OF THE DEPOSITION OF SILICON BY SILANE PYROLYSIS AT LOW-TEMPERATURES AND ATMOSPHERIC-PRESSURE [J].
BRYANT, WA .
THIN SOLID FILMS, 1979, 60 (01) :19-25
[3]  
DINGLE R, 1977, 6TH P INT S GAAS REL, V33, P210
[4]   NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J].
DUCHEMIN, JP ;
BONNET, M ;
KOELSCH, F ;
HUYGHE, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1134-1149
[5]   KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING [J].
FARROW, RFC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) :899-907
[6]   SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE [J].
ISHIBASHI, T ;
TARUCHA, S ;
OKAMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08) :L476-L478
[7]   ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE [J].
ISHIKAWA, T ;
SAITO, J ;
SASA, S ;
HIYAMIZU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11) :L675-L676
[8]   DISILANE - A NEW SILICON DOPING SOURCE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS [J].
KUECH, TF ;
MEYERSON, BS ;
VEUHOFF, E .
APPLIED PHYSICS LETTERS, 1984, 44 (10) :986-988
[9]   THE EFFECT OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
KUNZEL, H ;
KNECHT, J ;
JUNG, H ;
WUNSTEL, K ;
PLOOG, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (03) :167-173
[10]   CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J].
NEAVE, JH ;
BLOOD, P ;
JOYCE, BA .
APPLIED PHYSICS LETTERS, 1980, 36 (04) :311-312