CALCULATION OF BOND LENGTH IN GA1-XINXAS TERNARY SEMICONDUCTORS

[1] BELLESSA J, 1983, I PHYS C SER, V24, P529

[2] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J]. PHYSICAL REVIEW, 1966, 145 (02): : 637 - &

[3] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10): : 4005 - +

[4] ATOMIC-SCALE STRUCTURE OF RANDOM SOLID-SOLUTIONS - EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF GA1-XINXAS [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (19) : 1412 - 1415

[5] GENERAL VALENCE FORCE FIELD FOR DIAMOND [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 268 (1335): : 474 - &

[6] PHILLIPS JC, 1973, BONDS BANDS SEMICOND, P214

[7] EFFECT OF CLUSTERS ON LONG-WAVELENGTH OPTICAL PHONONS IN GA1-XINXAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3722 - 3729

[1] BELLESSA J, 1983, I PHYS C SER, V24, P529

[2] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J]. PHYSICAL REVIEW, 1966, 145 (02): : 637 - &

[3] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10): : 4005 - +

[4] ATOMIC-SCALE STRUCTURE OF RANDOM SOLID-SOLUTIONS - EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF GA1-XINXAS [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (19) : 1412 - 1415

[5] GENERAL VALENCE FORCE FIELD FOR DIAMOND [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 268 (1335): : 474 - &

[6] PHILLIPS JC, 1973, BONDS BANDS SEMICOND, P214

[7] EFFECT OF CLUSTERS ON LONG-WAVELENGTH OPTICAL PHONONS IN GA1-XINXAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3722 - 3729