STABILITY OF MO GATE MOS DEVICES USING HIGH-PURITY SPUTTERING TARGET

被引：2
作者：
AMAZAWA, T [1 ]
OIKAWA, H [1 ]
SHIONO, N [1 ]
HONMA, N [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 11期
关键词：
D O I：
10.1143/JJAP.23.L859
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L859 / L861
页数：3
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