DYNAMIC LINE BROADENING OF SEMICONDUCTOR-LASERS MODULATED AT HIGH-FREQUENCIES

被引：21
作者：
BUUS, J
机构：
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 04期
关键词：
D O I：
10.1049/el:19850092
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：129 / 131
页数：3
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共 12 条
[1]   THEORETICAL-ANALYSIS FOR GIGABIT - 2ND PULSE CODE MODULATION OF SEMICONDUCTOR-LASERS [J].
DANIELSEN, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (11) :657-660
[2]   FREQUENCY CHIRP UNDER CURRENT MODULATION IN INGAASP INJECTION-LASERS [J].
DUTTA, NK ;
OLSSON, NA ;
KOSZI, LA ;
BESOMI, P ;
WILSON, RB ;
NELSON, RJ .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (07) :2167-2169
[3]   MEASUREMENT OF THE LINEWIDTH ENHANCEMENT FACTOR-ALPHA OF SEMICONDUCTOR-LASERS [J].
HARDER, C ;
VAHALA, K ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1983, 42 (04) :328-330
[4]   MEASUREMENTS OF THE SEMICONDUCTOR-LASER LINEWIDTH BROADENING FACTOR [J].
HENNING, ID ;
COLLINS, JV .
ELECTRONICS LETTERS, 1983, 19 (22) :927-929
[5]   THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS [J].
HENRY, CH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) :259-264
[6]  
KASPER BL, 1984, 10TH EUR C OPT COMM
[7]   1.5-1.6-MU-M GALNASP/INP DYNAMIC-SINGLE-MODE (DSM) LASERS WITH DISTRIBUTED BRAGG REFLECTOR [J].
KOYAMA, F ;
SUEMATSU, Y ;
ARAI, S ;
TAWEE, TE .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :1042-1051
[8]   PICOSECOND FREQUENCY CHIRPING AND DYNAMIC LINE BROADENING IN INGAASP INJECTION-LASERS UNDER FAST EXCITATION [J].
LIN, C ;
LEE, TP ;
BURRUS, CA .
APPLIED PHYSICS LETTERS, 1983, 42 (02) :141-143
[9]  
LINKE RA, 1984, ELECTRON LETT, V20, P972
[10]   REDUCTION OF DYNAMIC LINEWIDTH IN SINGLE-FREQUENCY SEMICONDUCTOR-LASERS [J].
OLSHANSKY, R ;
FYE, D .
ELECTRONICS LETTERS, 1984, 20 (22) :928-929
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