INFLUENCE OF THE SUBSTRATE ORIENTATION ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS

被引：37
作者：
BOSE, SS
LEE, B
KIM, MH
STILLMAN, GE
WANG, WI
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 03期
关键词：
D O I：
10.1063/1.340066
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：743 / 748
页数：6
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