OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引：322
作者：
GOETZ, KH
BIMBERG, D
JURGENSEN, H
SELDERS, J
SOLOMONOV, AV
GLINSKII, GF
RAZEGHI, M
机构：
[1] TECH UNIV BERLIN,INST FESTKORPERFORSCH,D-1000 BERLIN 12,FED REP GER
[2] RHEIN WESTFAL TH AACHEN,SONDERFORSCHUNGSBEREICH 2028BASISLAB,D-5100 AACHEN,FED REP GER
[3] THOMSON CSF,CENT RECH DOMAINE CORBEVILLE LAB,F-91401 ORSAY,FRANCE
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 08期
关键词：
D O I：
10.1063/1.332655
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4543 / 4552
页数：10
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