PREPARATION OF GE-GAAS HETEROJUNCTIONS BY VACUUM EVAPORATION

被引：13
作者：
RYU, I
TAKAHASHI, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1965年 / 4卷 / 11期
关键词：
D O I：
10.1143/JJAP.4.850
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：850 / +
页数：1
相关论文
共 7 条
[1]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[2]  
ANDERSON RL, 1960, IBM J RES DEV, V4, P280
[3]  
HOLONYAK N, 1961, AUG AIME TECHN C SEM
[4]  
KROMER H, 1957, P IRE, V45, P1535
[5]   EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J].
MARINACE, JC .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :248-255
[6]   HIGH-TEMPERATURE OXIDATION AND VACUUM DISSOCIATION STUDIES ON THE A(III) AND B(III)BAR SURFACES OF GALLIUM ARSENIDE [J].
MILLER, DP ;
HARPER, JG ;
PERRY, TR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (12) :1123-1126
[7]  
Takahashi K., 1963, JAPAN J APPL PHYS, V2, P629, DOI [10.1143/JJAP.2.629, DOI 10.1143/JJAP.2.629]
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