CONTACT POTENTIAL DIFFERENCES FOR 3-5 COMPOUND SURFACES

被引：99
作者：
VANLAAR, J [1 ]
HUIJSER, A [1 ]
机构：
[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期
关键词：
D O I：
10.1116/1.568986
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：769 / 772
页数：4
相关论文
共 15 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   SURFACE STATES OF (110) SURFACE OF GAAS [J].
CALANDRA, C ;
SANTORO, G .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (06) :L86-L89
[3]   ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES [J].
DINAN, JH ;
GALBRAIT.LK ;
FISCHER, TE .
SURFACE SCIENCE, 1971, 26 (02) :587-&
[4]   PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].
EASTMAN, DE ;
FREEOUF, JL .
PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605
[5]   TEMPERATURE-DEPENDENCE AND ILLUMINATION-DEPENDENCE OF WORK FUNCTION OF GALLIUM-ARSENIDE [J].
GALBRAIT.LK ;
FISCHER, TE .
SURFACE SCIENCE, 1972, 30 (01) :185-&
[6]   SURFACE STATE BAND ON GAAS (110) FACE [J].
GREGORY, PE ;
SPICER, WE ;
CIRACI, S ;
HARRISON, WA .
APPLIED PHYSICS LETTERS, 1974, 25 (09) :511-514
[7]   WORK FUNCTION VARIATIONS OF GALLIUM-ARSENIDE CLEAVED SINGLE-CRYSTALS [J].
HUIJSER, A ;
VANLAAR, J .
SURFACE SCIENCE, 1975, 52 (01) :202-210
[8]   ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1. [J].
IBACH, H ;
HORN, K ;
DORN, R ;
LUTH, H .
SURFACE SCIENCE, 1973, 38 (02) :433-454
[9]   NEW SURFACE STATES OF AN UNRELAXED (110) SURFACE [J].
JOANNOPOULOS, JD ;
COHEN, ML .
PHYSICS LETTERS A, 1974, A 49 (05) :391-392
[10]   EVIDENCE FOR A SURFACE-STATE EXCITON ON GAAS(110) [J].
LAPEYRE, GJ ;
ANDERSON, J .
PHYSICAL REVIEW LETTERS, 1975, 35 (02) :117-120
12