STUDY OF THE CRYSTALLINE-STRUCTURE AND OF THE COMPOSITION OF PULVERIZED GALLIUM-ARSENIDE, WITH OR WITHOUT LASER ANNEALING

被引：4
作者：
ALIMOUSSA, L
CARCHANO, H
FASSIFIHRI, A
LALANDE, F
LOUSSIER, R
机构：
来源：
JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC1期
关键词：
D O I：
10.1051/jphyscol:1982145
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：341 / 346
页数：6
相关论文
共 10 条
  • [1] GROWTH OF HIGH-QUALITY EPITAXIAL GAAS FILMS BY SPUTTER DEPOSITION
    BARNETT, SA
    BAJOR, G
    GREENE, JE
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 734 - 737
  • [2] Dapkus P. D., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P960
  • [3] Guinier A., 1964, THEORIE TECHNIQUE RA, P482
  • [4] PLASMA-ASSISTED DEPOSITION AND EPITAXY OF GAAS FILMS
    HARIU, T
    TAKENAKA, K
    SHIBUYA, S
    KOMATSU, Y
    SHIBATA, Y
    [J]. THIN SOLID FILMS, 1981, 80 (1-3) : 235 - 239
  • [5] HOVEL HJ, 1976, SOLAR CELLS, V2, P103
  • [6] EFFICIENCY CALCULATIONS FOR THIN-FILM POLYCRYSTALLINE SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS
    LANZA, C
    HOVEL, HJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 392 - 396
  • [7] MOLNAR B, 1964, J APPL PHYS, V12, P3554
  • [8] SCHILLER C, 1978, J MICROSC SPECT ELEC, V3, P255
  • [9] SHIRLEY SC, 1978, 13E IEEE PHOT C
  • [10] Yeh Y. C. M., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P966
1