STRONGLY QUENCHED DEFORMATION POTENTIALS OF MN ACCEPTOR IN GAAS

被引：103

作者：

SCHAIRER, W ^{[1
]}

SCHMIDT, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPER FORSCH,7 STUTTGART,WEST GERMANY

来源：

PHYSICAL REVIEW B | 1974年 / 10卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.10.2501

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2501 / 2506

页数：6

共 27 条

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[9]

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[10] EDGE EMISSION INVOLVING MANGANESE IMPURITIES IN GAAS AT 4.2-DEGREES-K [J].

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