PICOSECOND PHOTOLUMINESCENCE STUDY OF RELAXATION PHENOMENA OF HOT-ELECTRONS IN A QUASI-ONE-DIMENSIONAL STRUCTURE

The energy relaxation phenomena of photoexcited hot carriers in a quasi-one-dimensional (quasi-1D) structure are investigated using the photoluminescence intensity correlation method. It was found for the first time that the anti-correlation dip appears on application of the external electric field, if the kinetic energy of electrons is nearly equal to the GaAs LO phonon energy. Results are discussed in terms of the imbalance between the cooling effect due to the electron-phonon interaction and the heating effect due to the external field. It is suggested that the energy relaxation time and/or the electron mobility is enhanced in quasi-1D structure.