STM STUDY OF THE GE GROWTH MODE ON SI(001) SUBSTRATES

被引：151

作者：

TOMITORI, M ^{[1
]}

WATANABE, K ^{[1
]}

KOBAYASHI, M ^{[1
]}

NISHIKAWA, O ^{[1
]}

机构：

[1] KANAZAWA INST TECHNOL,FAC ENGN,DEPT ELECTR,NONOICHI,ISHIKAWA 921,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1994年 / 76卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(94)90362-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Ge growth mode on a Si(001) substrate was examined by scanning tunneling microscopy (STM) on the atomic scale. Germanium overlayers on Si substrates exhibited the Stranski-Krastanov growth mode, where the deposited films grew layer-by-layer up to a few ML, followed by the several types of the three-dimensional islands with distinctive facets. The phase diagram of the Ge growth was constructed for the Ge coverages from less than 1 ML up to 8 ML at the growth temperatures of 300, 400 and 500-degrees-C, examining the STM images. Furthermore, annealing effects for the Ge overlayer were also studied to clarify the stability of the islands.

引用

页码：322 / 328

页数：7

共 16 条

[1] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE [J].

ASAI, M ;

UEBA, H ;

TATSUYAMA, C .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2577-2583

[2] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[3] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[4]

IWAWAKI F, 1991, SURF SCI, V253, pL411, DOI 10.1016/0039-6028(91)90574-C

[5] STM STUDY OF GE OVERLAYERS ON SI(001) [J].

IWAWAKI, F ;

TOMITORI, M ;

NISHIKAWA, O .

SURFACE SCIENCE, 1992, 266 (1-3) :285-288

[6] STM STUDY OF INITIAL-STAGE OF GE EPITAXY ON SI(001) [J].

IWAWAKI, F ;

TOMITORI, M ;

NISHIKAWA, O .

ULTRAMICROSCOPY, 1992, 42 :902-909

[7] GROWTH OF ABRUPT GE LAYERS IN SI (100) [J].

IYER, SS ;

PUKITE, PR ;

TSANG, JC ;

COPEL, MW .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :439-443

[8] MOLECULAR-BEAM EPITAXY OF STRAINED SILICON GERMANIUM-SILICON STRUCTURES [J].

KASPER, E ;

JORKE, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :1927-1934

[9] GROWTH OF GE ON SI(100) AND SI(113) STUDIED BY STM [J].

KNALL, J ;

PETHICA, JB .

SURFACE SCIENCE, 1992, 265 (1-3) :156-167

[10]

KOHLER U, 1992, ULTRAMICROSCOPY, V42, P823

← 1 2 →