ELECTRICAL TRANSPORT-PROPERTIES OF JOSEPHSON-JUNCTIONS WITH A NB/AU/PI/(PB-BI) STRUCTURE

被引：8
|
作者：
KUBOTA, T [1 ]
WADA, M [1 ]
IWAMOTO, M [1 ]
NOSHIRO, H [1 ]
SEKINE, M [1 ]
机构：
[1] TOKYO INST TECHNOL,DEPT APPL ELECTR,YOKOHAMA,KANAGAWA 227,JAPAN
来源：
THIN SOLID FILMS | 1992年 / 210卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(92)90233-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We fabricated tunnel junctions with structures of Au/PI/Pb and of Nb/Au/Pl/(Pb-Bi) incorporating high-quality and ultrathin polyimide (PI) Langmuir-Blodgett (LB) films and then examined the electrical transport properties of the junctions. The inelastic electron tunneling spectroscopy (IETS) spectra of the Au/PI/Pb junctions reveals that the inelastic electron tunneling process accompanied by the energy loss due to the coupling of tunneling electrons with the vibrational modes of polyimide does not make a significant contribution. For Nb/Au/PI/(Pb-Bi) Josephson junctions, we obtained typical I-V characteristics of a weakly coupled superconductor.
引用
收藏
页码：277 / 279
页数：3
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