ELECTRICAL BEHAVIOR OF EXTENDED TWINS PRESENT IN LAYERED GESE

被引：6

作者：

ANAGNOSTOPOULOS, AN

KYRIAKOS, DS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.336942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2859 / 2862

页数：4

相关论文

共 14 条

[1] COMPARISON OF THE STRUCTURE AND THE ELECTRIC PROPERTIES OF ZNIN2S4(III)-LAYERED AND CDINGAS4-LAYERED CRYSTALS
ANAGNOSTOPOULOS, AN
MANOLIKAS, C
PAPADOPOULOS, D
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (02): : 595 - 601
[2] ELECTRICAL PROPERTIES OF GERMANIUM SELENIDE GESE
ASANABE, S
OKAZAKI, A
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (06) : 989 - 997
[3] DIMITRIADIS CA, 1984, POLYMICROCRYSTALLINE, P113
[4] FAHRENBRUCH AL, 1983, FUNDAMENTALS SOLAR C, P361
[5] ELECTRICAL-CONDUCTION OF GESE AT LOW-TEMPERATURES
ISHIHARA, Y
NAKADA, I
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01): : 285 - 296
[6] ELECTRICAL-CONDUCTIVITY OF LAYERED GESE RELATED TO EXTENDED FAULTS
KYRIAKOS, DS
ANAGNOSTOPOULOS, AN
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) : 3917 - 3920
[7] GROWTH OF GERMANIUM MONOSELENIDE SINGLE-CRYSTALS
KYRIAKOS, DS
KARAKOSTAS, TK
ECONOMOU, NA
[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 35 (02) : 223 - 226
[8] KYRIAKOS DS, 1979, I PHYS C SER, V43, pCH8
[9] THE CRYSTAL STRUCTURE OF GERMANIUM SELENIDE GESE
OKAZAKI, A
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (10) : 1151 - 1155
[10] DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE
PIKE, GE
SEAGER, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3414 - 3422