OPTIMIZATION OF BF2+ IMPLANTED AND RAPIDLY ANNEALED JUNCTIONS IN SILICON

[1] BEANLAND DG, 1977, ION IMPLANTATION SEM, P31

[2] BLAMIRES NG, 1968, PHYS LETT A, VA 28, P178, DOI 10.1016/0375-9601(68)90186-2

[3] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J]. ELECTRON DEVICE LETTERS, 1980, 1 (01): : 2 - 4

[4] CARTER C, 1984, APPL PHYS LETT, V44, P495

[5] SHEET RESISTIVITY AND TRANSMISSION ELECTRON-MICROSCOPE INVESTIGATIONS OF BF2+-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3310 - 3318

[6] COMPARATIVE-STUDY OF ANNEALED NEON-ION, ARGON-ION, AND KRYPTON-ION IMPLANTATION DAMAGE IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) : 5188 - 5198

[7] DROWLEY CI, 1985, 1984 P MAT RES SOC E, V35, P375

[8] SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE [J]. APPLIED PHYSICS LETTERS, 1971, 18 (12) : 581 - &

[9] Fair R. B., 1983, International Electron Devices Meeting 1983. Technical Digest, P658

[10] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 604 - 606

[1] BEANLAND DG, 1977, ION IMPLANTATION SEM, P31

[2] BLAMIRES NG, 1968, PHYS LETT A, VA 28, P178, DOI 10.1016/0375-9601(68)90186-2

[3] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J]. ELECTRON DEVICE LETTERS, 1980, 1 (01): : 2 - 4

[4] CARTER C, 1984, APPL PHYS LETT, V44, P495

[5] SHEET RESISTIVITY AND TRANSMISSION ELECTRON-MICROSCOPE INVESTIGATIONS OF BF2+-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3310 - 3318

[6] COMPARATIVE-STUDY OF ANNEALED NEON-ION, ARGON-ION, AND KRYPTON-ION IMPLANTATION DAMAGE IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) : 5188 - 5198

[7] DROWLEY CI, 1985, 1984 P MAT RES SOC E, V35, P375

[8] SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE [J]. APPLIED PHYSICS LETTERS, 1971, 18 (12) : 581 - &

[9] Fair R. B., 1983, International Electron Devices Meeting 1983. Technical Digest, P658

[10] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 604 - 606