FAR UV PULSED LASER MELTING OF SILICON

被引：54

作者：

GORODETSKY, G ^{[1
]}

KANICKI, J ^{[1
]}

KAZYAKA, T ^{[1
]}

MELCHER, RL ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 06期

关键词：

D O I：

10.1063/1.95533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：547 / 549

页数：3

共 19 条

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[5]

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[8]

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[9]

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[10] PHASE-TRANSFORMATION ON AND CHARGED-PARTICLE EMISSION FROM A SILICON CRYSTAL-SURFACE, INDUCED BY PICOSECOND LASER-PULSES [J].

LIU, JM ;

YEN, R ;

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BLOEMBERGEN, N .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :755-757

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