DOPANT DISTRIBUTION FOR MAXIMUM CARRIER MOBILITY IN SELECTIVELY DOPED AL0.30GA0.70AS/GAAS HETEROSTRUCTURES

被引:35
作者
SCHUBERT, EF
PFEIFFER, L
WEST, KW
IZABELLE, A
机构
关键词
D O I
10.1063/1.100712
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1350 / 1352
页数:3
相关论文
共 19 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[4]   QUANTUM SIZE EFFECT IN MONOLAYER-DOPED HETEROSTRUCTURES [J].
CUNNINGHAM, JE ;
TSANG, WT ;
TIMP, G ;
SCHUBERT, EF ;
CHANG, AM ;
OWUSUSEKYERE, K .
PHYSICAL REVIEW B, 1988, 37 (08) :4317-4320
[5]   GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS [J].
ENGLISH, JH ;
GOSSARD, AC ;
STORMER, HL ;
BALDWIN, KW .
APPLIED PHYSICS LETTERS, 1987, 50 (25) :1826-1828
[6]   TWO-DIMENSIONAL ELECTRON-GAS OF VERY HIGH MOBILITY IN PLANAR DOPED HETEROSTRUCTURES [J].
ETIENNE, B ;
PARIS, E .
JOURNAL DE PHYSIQUE, 1987, 48 (12) :2049-2052
[7]   OBSERVATION OF STRONG LOCALIZATION EFFECTS IN (ALGA)AS-GAAS TWO-DIMENSIONAL ELECTRON-GAS STRUCTURES AT LOW MAGNETIC-FIELDS [J].
FOXON, CT ;
HARRIS, JJ ;
WHEELER, RG ;
LACKLISON, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :511-514
[8]  
HIYAMIZU K, 1983, JPN J APPL PHYS, V22, P1609
[9]   TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES [J].
MENDEZ, EE ;
PRICE, PJ ;
HEIBLUM, M .
APPLIED PHYSICS LETTERS, 1984, 45 (03) :294-296
[10]  
Pfeiffer L. N., UNPUB