TEMPERATURE-DEPENDENCE OF GROWTH OF GEXSI1-X BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION

被引：59
作者：
RACANELLI, M
GREVE, DW
机构：
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 25期
关键词：
D O I：
10.1063/1.102876
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the deposition of epitaxial films of GexSi 1-x on (100) silicon by the ultrahigh vacuum chemical vapor deposition technique. Epitaxial films grown at temperatures ranging from 577 to 665°C have been characterized with respect to growth rate and germanium content. The results show features which have not been previously reported including an incubation time and a peak in the growth rate as a function of GeH4/H2 flow.
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页码：2524 / 2526
页数：3
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