COUPLED GAMMA-X ELECTRONIC STATES IN ALAS GAAS QUANTUM WELL STRUCTURES

被引：16

作者：

LIU, HC

机构：

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1990年 / 7卷 / 01期

关键词：

D O I：

10.1016/0749-6036(90)90111-J

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Coupled Γ-X electronic states in AlAsGaAs quantum well structures are investigated theoretically. Although the coupling between Γ and X valleys in most quantum well and superlattice structures is weak, a strong coupling is expected when eigenenergies of Γ and X quantum confined states are close or degenerate. The coupling gives rise to a number of interesting physical effects. A model effective mass approximation is used, and recent experiments are discussed. © 1990.

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页码：35 / 38

页数：4

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