INTERACTION BETWEEN DISLOCATIONS AND IN IN IN-DOPED GAAS SINGLE-CRYSTALS UNDER HIGH-TEMPERATURE PLASTIC-DEFORMATION

被引：20

作者：

DJEMEL, A ^{[1
]}

CASTAING, J ^{[1
]}

DUSEAUX, M ^{[1
]}

机构：

[1] LAB CENT RECH,ELECTRON & PHYS APPL LABS,F-94450 LIMEIL BREVANNES,FRANCE

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1988年 / 57卷 / 04期

关键词：

AGING OF MATERIALS - CRYSTALS - Dislocations - SEMICONDUCTOR MATERIALS - Deformation;

D O I：

10.1080/01418618808214416

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interaction between dislocations and indium has been studied in In-doped GaAs under high-temperature plastic deformation. This interaction is revealed by yield drops in the stress-strain curves after stress relaxations, and by serrated yielding (the Portevin-Le Chatelier effect). Static aging can be shown to be due to elastic interactions, in agreement with the model recently proposed by M. Ehrenreich and J. P. Hirth.

引用

页码：671 / 676

页数：6

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