CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAAS, TI, AND MO

被引：49

作者：

CHINN, JD ^{[1
]}

FERNANDEZ, A ^{[1
]}

ADESIDA, I ^{[1
]}

WOLF, ED ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.571981

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：701 / 704

页数：4

共 20 条

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[6] DIRECTIONAL REACTIVE-ION-ETCHING OF INP WITH CL-2 CONTAINING GASES [J].

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RENTSCHLER, JA .

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[7]

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[8]

DONNELLY VM, 1981, 3RD JECS S PLASM ETC

[9]

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[10]

FOX TT, 1981, J VAC SCI TECHNOL, V19, P1397

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