THE DEPTH DEPENDENCE OF THE DEPTH RESOLUTION IN SPUTTER PROFILING

被引：53
作者：
WERNER, HW
机构：
来源：
SURFACE AND INTERFACE ANALYSIS | 1982年 / 4卷 / 01期
关键词：
D O I：
10.1002/sia.740040102
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：1 / 7
页数：7
相关论文
共 12 条
[1]   ELEMENTAL COMPOSITION PROFILING IN THIN-FILMS BY GLOW-DISCHARGE MASS-SPECTROMETRY - DEPTH RESOLUTION [J].
COBURN, JW ;
ECKSTEIN, EW ;
KAY, E .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2828-2830
[2]   EVALUATION OF CONCENTRATION-DEPTH PROFILES BY SPUTTERING IN SIMS AND AES [J].
HOFMANN, S .
APPLIED PHYSICS, 1976, 9 (01) :59-66
[3]  
Hofmann S., 1980, Surface and Interface Analysis, V2, P148, DOI 10.1002/sia.740020406
[4]  
HONIG RE, 1979, 26TH P ANN C MASS SP, P207
[5]   OPTIMIZED DEPTH RESOLUTION IN ION-SPUTTERED AND LAPPED COMPOSITIONAL PROFILES WITH AUGER-ELECTRON SPECTROSCOPY [J].
LEA, C ;
SEAH, MP .
THIN SOLID FILMS, 1981, 75 (01) :67-86
[6]  
LEE YW, 1960, STATISTICAL THEORY C, P43
[7]  
MAGEE CW, 1980, COMMUNICATION
[8]   THEORETICAL AND EXPERIMENTAL ASPECTS OF SECONDARY ION MASS-SPECTROMETRY [J].
WERNER, HW .
VACUUM, 1974, 24 (10) :493-504
[9]  
WERNER HW, 1977, MIKROCHIMICA ACTA S, V7, P63
[10]  
WERNER HW, 1969, DEVELOPMENTS APPLI A, V7, P239
12