IMPURITY AND DEFECT LEVELS IN BERYLLIUM-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：42
作者：
BHATTACHARYA, PK
BUHLMANN, HJ
ILEGEMS, M
STAEHLI, JL
机构：
[1] SWISS FED INST TECHNOL,INST MICROELECTR,CH-1015 LAUSANNE,SWITZERLAND
[2] SWISS FED INST TECHNOL,INST APPL PHYS,CH-1015 LAUSANNE,SWITZERLAND
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 09期
关键词：
D O I：
10.1063/1.331511
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：6391 / 6398
页数：8
相关论文
共 31 条
[1]   INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].
ASHEN, DJ ;
DEAN, PJ ;
HURLE, DTJ ;
MULLIN, JB ;
WHITE, AM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053
[2]   TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS [J].
BHATTACHARYA, PK ;
KU, JW ;
OWEN, SJT ;
AEBI, V ;
COOPER, CB ;
MOON, RL .
APPLIED PHYSICS LETTERS, 1980, 36 (04) :304-306
[3]   ROOM-TEMPERATURE OPERATION OF LOW-THRESHOLD SEPARATE-CONFINEMENT HETEROSTRUCTURE INJECTION LASER WITH DISTRIBUTED FEEDBACK [J].
CASEY, HC ;
SOMEKH, S ;
ILEGEMS, M .
APPLIED PHYSICS LETTERS, 1975, 27 (03) :142-144
[4]   EFFECT OF SUBSTRATE SURFACE-TREATMENT IN MOLECULAR-BEAM EPITAXY ON THE VERTICAL ELECTRONIC TRANSPORT THROUGH THE FILM-SUBSTRATE INTERFACE [J].
CHANG, CA ;
HEIBLUM, M ;
LUDEKE, R ;
NATHAN, MI .
APPLIED PHYSICS LETTERS, 1981, 39 (03) :229-231
[5]   BERYLLIUM DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHENG, KY ;
CHO, AY ;
BONNER, WA .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4672-4675
[6]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[7]   INFLUENCE OF GROWTH-CONDITIONS ON THE THRESHOLD CURRENT-DENSITY OF DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].
CHO, AY ;
CASEY, HC ;
RADICE, C ;
FOY, PW .
ELECTRONICS LETTERS, 1980, 16 (02) :72-74
[8]  
Covington D. W., 1979, Gallium Arsenide and Related Compounds 1978, P171
[9]   IRON DOPING IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY [J].
COVINGTON, DW ;
COMAS, J ;
YU, PW .
APPLIED PHYSICS LETTERS, 1980, 37 (12) :1094-1096
[10]   ELECTRON TRAPS CREATED BY HIGH-TEMPERATURE ANNEALING IN MBE N-GAAS [J].
DAY, DS ;
OBERSTAR, JD ;
DRUMMOND, TJ ;
MORKOC, H ;
CHO, AY ;
STREETMAN, BG .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) :445-453
1234