BALLISTIC-ELECTRON-EMISSION MICROSCOPY OF STRAINED SI1-XGEX LAYERS

被引：18

作者：

BELL, LD

MILLIKEN, AM

MANION, SJ

KAISER, WJ

FATHAUER, RW

PIKE, WT

机构：

[1] Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.50.8082

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ballistic-electron-emission microscopy (BEEM) has been used to investigate the effects of strain on Si1-xGex alloys. Lifting of the degeneracy of the conduction-band minimum of Si1-xGex due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures. Experimental values for this conduction-band splitting agree well with calculations. In addition, an unexpected heterogeneity in the strain of the Si1-xGex layer is introduced by deposition of Au. This effect, not observed with Ag, is attributed to species interdiffusion and has important implications for metal-semiconductor devices based on pseudomorphic Si1-xGex/Si material systems.

引用

页码：8082 / 8085

页数：4

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