PREPARATION AND PROPERTIES OF LASER EVAPORATED CUGASE2 THIN-FILMS

Bulk copper gallium diselenide material was prepared by melting the pure constituent elements in stoichiometric proportion. Thin films of CuGaSe2 were deposited by a laser evaporation technique. Both the bulk material and thin films were characterised by XRD, SEM and AES. The effect of substrate temperature on the structure and composition, electrical and optical properties of the films has been studied. Polycrystalline stoichiometric films of CuGaSe2 can be deposited at substrate temperatures in the range 350-400-degrees-C and the films prepared at 370-degrees-C have a resistivity of about 10(3) OMEGA cm. The energy band gap was found to be 1.68 eV at stoichiometric composition.