OBSERVATION OF INTERBAND TRANSITIONS IN CD3AS2

[1] MAGNETOREFLECTION IN BISMUTH [J]. PHYSICAL REVIEW, 1963, 129 (05): : 2055 - &

[2] BURSTEIN E, 1962, P INT C PHYSICS SEMI

[3] DRESSELHAUS MS, 1965, INT C OPT PROP METAL

[4] THEORY OF FINE STRUCTURE ON THE ABSORPTION EDGE IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 382 - 388

[5] HAIDEMENAKIS ED, 1964, RAPPORT ACTIVITE LAB

[6] A RELATIONSHIP BETWEEN THE REFRACTIVE INDEX AND THE INFRA-RED THRESHOLD OF SENSITIVITY FOR PHOTOCONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1950, 63 (363): : 167 - 176

[7] CD3AS2 - A NONCUBIC SEMICONDUCTOR WITH UNUSUALLY HIGH ELECTRON MOBILITY [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1621 - 1622

[8] SUR QUELQUES PROPRIETES DE CD3AS2 [J]. JOURNAL DE PHYSIQUE ET LE RADIUM, 1961, 22 (12): : 807 - 810

[9] PHYSICAL PROPERTIES OF SEVERAL II-V SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1961, 121 (03): : 759 - &

[1] MAGNETOREFLECTION IN BISMUTH [J]. PHYSICAL REVIEW, 1963, 129 (05): : 2055 - &

[2] BURSTEIN E, 1962, P INT C PHYSICS SEMI

[3] DRESSELHAUS MS, 1965, INT C OPT PROP METAL

[4] THEORY OF FINE STRUCTURE ON THE ABSORPTION EDGE IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 382 - 388

[5] HAIDEMENAKIS ED, 1964, RAPPORT ACTIVITE LAB

[6] A RELATIONSHIP BETWEEN THE REFRACTIVE INDEX AND THE INFRA-RED THRESHOLD OF SENSITIVITY FOR PHOTOCONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1950, 63 (363): : 167 - 176

[7] CD3AS2 - A NONCUBIC SEMICONDUCTOR WITH UNUSUALLY HIGH ELECTRON MOBILITY [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1621 - 1622

[8] SUR QUELQUES PROPRIETES DE CD3AS2 [J]. JOURNAL DE PHYSIQUE ET LE RADIUM, 1961, 22 (12): : 807 - 810

[9] PHYSICAL PROPERTIES OF SEVERAL II-V SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1961, 121 (03): : 759 - &