PREPARATION OF TEM PLAN-VIEW AND CROSS-SECTIONAL SPECIMENS OF ZNSE/GAAS EPILAYERS BY CHEMICAL THINNING AND ARGON ION MILLING

被引：14
作者：
WANG, N [1 ]
FUNG, KK [1 ]
机构：
[1] HONG KONG UNIV SCI & TECHNOL,DEPT PHYS,KOWLOON,HONG KONG
来源：
ULTRAMICROSCOPY | 1995年 / 60卷 / 03期
关键词：
D O I：
10.1016/0304-3991(95)00076-3
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Clean and even millimetre-size electron-transparent plan-view specimens of ZnSe/GaAs with and without the GaAs substrate completing with a lift-off method for GaAs epilayers have been prepared by chemical thinning with a 5:1 (NaOH:H2O2) solution. Cross-sectional specimens of ZnSe/GaAs with very little ion-induced damages and extensive thin area suitable for HREM imaging have been prepared by argon ion milling. Ion-induced damage in ZnSe has virtually been eliminated by progressively decreasing ion voltages to 0.7 kV. Large thin areas result from the glue line of the cross-sectional specimen being shadowed by the GaAs substrate in off-centre single-side ion milling.
引用
收藏
页码：427 / 435
页数：9
相关论文
共 19 条
  • [1] CROSS-SECTIONAL SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY
    ABRAHAMS, MS
    BUIOCCHI, CJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3315 - 3316
  • [2] BROOKER GR, 1963, APPL PHYS LETT, V3, P156
  • [3] CHANG PH, 1988, MATER RES SOC S P, V115, P93
  • [4] CHEW NG, 1987, ULTRAMICROSCOPY, V23, P176
  • [5] CHU SNG, 1984, J ELECTROCHEM SOC, V131, P2663, DOI 10.1149/1.2115378
  • [6] THE GROWTH BY MOCVD USING NEW GROUP-VI SOURCES AND ASSESSMENT BY HRTEM AND CL OF ZN-BASED II-VI SINGLE-CRYSTAL LAYERS
    COCKAYNE, B
    WRIGHT, PJ
    SKOLNICK, MS
    PITT, AD
    WILLIAMS, JO
    NG, TL
    [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 17 - 22
  • [7] CULLIS AG, 1988, MATER RES SOC S P, V115, P3
  • [8] FUNG KK, UNPUB
  • [9] ROLE OF STACKING-FAULTS AS MISFIT DISLOCATION SOURCES AND NONRADIATIVE RECOMBINATION CENTERS IN II-VI HETEROSTRUCTURES AND DEVICES
    GUHA, S
    DEPUYDT, JM
    QIU, J
    HOFLER, GE
    HAASE, MA
    WU, BJ
    CHENG, H
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (22) : 3023 - 3025
  • [10] CROSS-SECTION PREPARATION FOR TEM OF FILM-SUBSTRATE COMBINATIONS WITH A LARGE DIFFERENCE IN SPUTTERING YIELDS
    HELMERSSON, U
    SUNDGREN, JE
    [J]. JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1986, 4 (04): : 361 - 369
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