DETERMINATION OF THE ONSET OF PLASTIC-DEFORMATION IN ZNSE LAYERS GROWN ON (100) GAAS BY MOLECULAR-BEAM EPITAXY

被引:38
作者
KLEIMAN, J [1 ]
PARK, RM [1 ]
QADRI, SB [1 ]
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
关键词
D O I
10.1063/1.338007
中图分类号
O59 [应用物理学];
学科分类号
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页码:2067 / 2069
页数:3
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共 10 条
[1]  
BALL CA, 1983, DISLOCATIONS SOLIDS, V6, P123
[2]   X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS [J].
BARTELS, WJ ;
NIJMAN, W .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :518-525
[3]   ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J].
FRANK, FC ;
VANDERMERWE, JH .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :216-225
[4]   REACTOR PRESSURE-DEPENDENCE OF PROPERTIES OF UNDOPED ZNSE GROWN BY LOW-PRESSURE OMVPE [J].
FUJITA, S ;
YODO, T ;
MATSUDA, Y ;
SASAKI, A .
JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) :169-172
[5]  
Honstra J., 1978, J CRYST GROWTH, V44, P513
[6]   DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J].
MATTHEWS, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :126-133
[7]  
MATTHEWS JW, 1975, EPITAXIAL GROWTH B
[8]   COHERENT GROWTH OF ZNSE ON GAAS BY MOCVD [J].
MITSUHASHI, H ;
MITSUISHI, I ;
MIZUTA, M ;
KUKIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L578-L580
[9]   MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE ON (100)GAAS BY COMPOUND SOURCE AND SEPARATE SOURCE EVAPORATION - A COMPARATIVE-STUDY [J].
PARK, RM ;
MAR, HA ;
SALANSKY, NM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :676-680