DETERMINATION OF THE ONSET OF PLASTIC-DEFORMATION IN ZNSE LAYERS GROWN ON (100) GAAS BY MOLECULAR-BEAM EPITAXY

被引：38

作者：

KLEIMAN, J ^{[1
]}

PARK, RM ^{[1
]}

QADRI, SB ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.338007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2067 / 2069

页数：3

共 50 条

[1] SURFACE-STRUCTURES AND PROPERTIES OF ZNSE GROWN ON (100) GAAS BY MOLECULAR-BEAM EPITAXY
PARK, RM
SALANSKY, NM
APPLIED PHYSICS LETTERS, 1984, 44 (02) : 249 - 251
[2] INVESTIGATION OF INAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS SUBSTRATES
DVORYANKINA, GG
DVORYANKIN, VF
PETROV, AG
KUDRYASHOV, AA
POROTIKOV, AP
VARAKSIN, GA
KHUSID, LB
INORGANIC MATERIALS, 1987, 23 (11) : 1569 - 1574
[3] Refractive index measurements of ZnSe-based ternary epitaxial layers grown by molecular-beam epitaxy on GaAs (100)
Peiris, FC
Lee, S
Bindley, U
Furdyna, JK
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03): : 1214 - 1217
[4] ATOMIC LAYER EPITAXY OF ZNSE ON GAAS(100) BY METALORGANIC MOLECULAR-BEAM EPITAXY
KIMURA, R
KONAGAI, M
TAKAHASHI, K
JOURNAL OF CRYSTAL GROWTH, 1992, 116 (3-4) : 283 - 288
[5] ON THE MICROSTRUCTURE AND INTERFACIAL STRUCTURE OF INSB LAYERS GROWN ON GAAS(100) BY MOLECULAR-BEAM EPITAXY
KIELY, CJ
CHYI, JI
ROCKETT, A
MORKOC, H
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 60 (03): : 321 - 337
[6] SURFACE-MORPHOLOGY OF GAAS-(100) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
DVORYANKINA, GG
DVORYANKIN, VF
POROTIKOV, AP
VARAKSIN, GA
PETROV, AG
INORGANIC MATERIALS, 1985, 21 (02) : 148 - 150
[7] DEEP STATES IN GAAS(IN) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
HUANG, YJ
IOANNOU, DE
ILIADIS, A
JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S31 - S31
[8] SEMIINSULATING GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
KORDOS, P
FORSTER, A
BETKO, J
MORVIC, M
NOVAK, J
APPLIED PHYSICS LETTERS, 1995, 67 (07) : 983 - 985
[9] CHARACTERIZATION OF ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
YAO, T
JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 31 - 40
[10] POLARITY DETERMINATION OF CDTE(111) ORIENTATION GROWN ON GAAS(100) BY MOLECULAR-BEAM EPITAXY
HSU, C
SIVANANTHAN, S
CHU, X
FAURIE, JP
APPLIED PHYSICS LETTERS, 1986, 48 (14) : 908 - 910

← 1 2 3 4 5 →