LASER ANNEALING OF ARSENIC IMPLANTED SILICON

被引：35

作者：

KRYNICKI, J

SUSKI, J

UGNIEWSKI, S

GROTZSCHEL, R

KLABES, R

KREISSIG, U

RUDIGER, J

机构：

[1] INST NUCL RES,PL-05400 SWIERK,POLAND

[2] ZENT INST KERNFORSCH,ROSSENDORF,GER DEM REP

来源：

PHYSICS LETTERS A | 1977年 / 61卷 / 03期

关键词：

D O I：

10.1016/0375-9601(77)90286-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：181 / 182

页数：2

共 9 条

[1]

CHAIBULLIN JB, 1975, P C ION IMPLANTATION, P212

[2]

CHU WK, 1974, P C ION IMPLANTATION, P177

[3]

Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443

[4]

GERASIMENKO NN, 1975, P C ION IMPLANTATION, P263

[5]

IWAKI M, 1974, P C ION IMPLANTATION, P163

[6]

KUTUKOVA OG, 1976, PHYS TECHNOL SEMICON, V10, P443

[7] DISLOCATION REACTIONS IN ARSENIC-IMPLANTED AND ANNEALED SILICON [J].

MADER, S ;

MICHEL, AE .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (02) :793-805

[8] RESIDUAL LATTICE DAMAGE IN AS-IMPLANTED AND ANNEALED SI [J].

MADER, S ;

MICHEL, AE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :391-395

[9]

SHTYRKOV EI, 1975, P C ION IMPLANTATION, P247

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