ON THE EFFICIENCY OF RADIATION DEFECT FORMATION IN CSI CRYSTALS

被引：0

作者：

GUD, IZ ^{[1
]}

DUBELT, SP ^{[1
]}

STRUK, YA ^{[1
]}

PAVLYK, BV ^{[1
]}

机构：

[1] I FRANKO UNIV,LVOV,UKRAINE

来源：

UKRAINSKII FIZICHESKII ZHURNAL | 1991年 / 36卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The efficiency of radiation' defect formation has been studied in CsI single crystals depending on conditions of their production, kind of impurities and amount of the doze absorbed. It is shown that defect formation efficiency is much higher in CsI single crystals grown by the Chiropulos method. Efficiency of defect formation in CsI (MK) is much higher. Existence of inovalent impurities in CsI single crystals influences essentially the radiation defect formation.

引用

页码：1529 / 1532

页数：4