FORMATION OF A SILICON-CARBIDE LAYER DURING CF4/H2 DRY ETCHING OF SI

被引：53

作者：

COYLE, GJ

OEHRLEIN, GS

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.96086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：604 / 606

页数：3

共 12 条

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[8] NEAR-SURFACE DAMAGE AND CONTAMINATION AFTER CF4-H2 REACTIVE ION ETCHING OF SI [J].

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PETRILLO, EJ .

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[10]

OEHRLEIN GS, UNPUB

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