THE EFFECT OF ION-BEAM MIXING ON SIMS DEPTH RESOLUTION

被引：15

作者：

LIKONEN, J ^{[1
]}

HAUTALA, M ^{[1
]}

KOPONEN, I ^{[1
]}

机构：

[1] UNIV HELSINKI,DEPT PHYS,SF-00170 HELSINKI 17,FINLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 64卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)95455-Z

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have studied the mixing of a bilayer sample interface. The Au/Pt bilayer was sectioned in a SIMS apparatus in order to gain information on the influence of atomic mixing on depth resolution. Experiments were performed with Ar+ sputter ions at energy 5 keV, bombarding at an angle of 48-degrees. The experimental decay length which characterizes the exponential falloff is 21 angstrom. Collisional mixing and thermal spike mixing have been calculated with no free parameters. The decay lengths from collisional and spike mixing in this case study are 9.5 and 25 angstrom, respectively. Collisional mixing thus gives a lower and the simple thermal spike model an upper limit for the broadening.

引用

页码：149 / 152

页数：4

共 26 条

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[2]

ANDERSEN HH, 1979, APPL PHYS, V18, P288

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