SCHEME OF ELECTRONIC-TRANSITIONS VIA 0.94, 1.0, 1.2, AND 1.3 EV RADIATIVE CENTERS IN N-GAAS

被引：20

作者：

GLINCHUK, KD ^{[1
]}

PROKHOROVICH, AV ^{[1
]}

RODIONOV, VE ^{[1
]}

VOVNENKO, VI ^{[1
]}

机构：

[1] ACAD SCI UKSSR,INST SEMICOND,KIEV,UKSSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 41卷 / 02期

关键词：

D O I：

10.1002/pssa.2210410240

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：659 / 668

页数：10

共 16 条

[1] INTERNAL RADIATIVE EFFICIENCY AND MECHANISM OF TEMPERATURE QUENCHING OF 1.03, 1.20, AND 1.30 EV EMISSION BANDS IN N-GAAS
GLINCHUK, KD
PROKHOROVICH, AV
VOVNENKO, VI
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (02): : 777 - 786
[2] TEMPERATURE QUENCHING OF 1.28 TO 1.30 EV-EMISSION BAND IN GAAS
GLINCHUK, KD
PROKHOROVICH, AV
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 23 (01): : K77 - K81
[3] 0.94, 1.01, AND 1.29 EV LUMINESCENCE BANDS IN LASER-EXCITED N-GAAS
GLINCHUK, KD
LINNIK, LF
RODIONOV, VE
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 18 (01): : K23 - K26
[4] GLINCHUK KD, 1976, FIZ TEKH POLUPROV, V10, P1097
[5] GLINCHUK KD, 1976, FIZ TEKH POLUPROV, V10, P2167
[6] HERBST HJ, 1973, PROBLEME FESTKORPERE, V5, P7
[7] KOPILOV AA, 1974, FIZ TEKH POLUPROV, V8, P2398
[8] PHOTOLUMINESCENCE OF DONOR DOPED GAAS DIFFUSED WITH COPPER
NAKASHIMA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (12) : 1737 - +
[9] Pankove J. I, 1975, OPTICAL PROCESSES SE
[10] RECOMBINATION AND TRAPPING PROCESSES AT DEEP CENTERS IN N-TYPE GAAS
SUGIYAMA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (05) : 601 - &