共 8 条
- [1] BIERSACK JP, ION IMPLANTATION SEM, P211
- [2] MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 21 - 24
- [3] DENSITY PROFILE OF IMPLANTED HE-3 MEASURED BY MEANS OF HE-3(D,P)HE-4 NUCLEAR-REACTION [J]. NUCLEAR INSTRUMENTS & METHODS, 1975, 124 (02): : 573 - 577
- [4] HUFSCHMIDT M, 1975, SEP INT C ION BEAM S
- [5] TEMPERATURE CONTROLLED TARGET SYSTEM FOR USE UNDER HIGH-INTENSITY ION-BOMBARDMENT [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1976, 9 (05): : 402 - 404
- [6] MOLLER W, 1976, DPG, V11, P1010
- [7] MOLLER W, IN PRESS
- [8] SCHENK M, 1970, DIFFUSION METALLISCH, P161