共 50 条
- [1] OPTICAL IONIZATION CROSS SECTIONS OF THE TRAPS CREATED IN 1 Mev ELECTRON IRRADIATED n-TYPE Ga1 - xAlxAs. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 116 B&C (1-3): : 474 - 478
- [2] DIFFUSION AND ELECTRONIC STATES OF HYDROGEN IN N-TYPE GAAS AND N-TYPE GA1-XALXAS PHYSICAL REVIEW B, 1992, 45 (15): : 8803 - 8806
- [4] PHOTOIONIZATION CROSS SECTIONS OF E LEVELS IN ELECTRON-IRRADIATED n-TYPE GaAs. Soviet physics journal, 1986, 29 (05): : 356 - 359
- [6] Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (12): : 7184 - 7188
- [8] SURFACE-BARRIER STRUCTURES OF METAL AND N-TYPE GA1-XALXAS, AND THEIR ENERGY-BAND DIAGRAM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (03): : 398 - +
- [9] ANNEALING OF ELECTRON-IRRADIATED N-TYPE SILICON .1. DONOR CONCENTRATION DEPENDENCE PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 427 - +