A NOTE ON THE SHUKLA-SEN DRIFT VELOCITY MODEL FOR HOT CHARGE-CARRIERS IN GE AND SI

被引：1
作者：
ROY, DK
机构：
[1] Indian Institute of Technology Hauz Khas New Delhi
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 12期
关键词：
D O I：
10.1016/0038-1101(93)90230-N
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：1795 / 1796
页数：2
相关论文
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[2]   UNIFIED MODEL FOR DRIFT VELOCITIES OF ELECTRONS AND HOLES IN SEMICONDUCTORS AS A FUNCTION OF TEMPERATURE AND ELECTRIC-FIELD [J].
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SOLID-STATE ELECTRONICS, 1992, 35 (10) :1391-1396
[3]   ANALYTICAL EXPRESSIONS FOR THE DRIFT VELOCITY OF HOT CHARGE-CARRIERS IN SILICON [J].
SHUKLA, SR ;
SEN, MN .
SOLID-STATE ELECTRONICS, 1992, 35 (04) :593-597
[4]  
SZE SM, 1981, PHYSICS SEMICONDUCTO, P44
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