ALLOTAXIAL GROWTH OF SINGLE-CRYSTAL SI/COSI2/SI(100) HETEROSTRUCTURES

被引：6
作者：
BAY, HL
MANTL, S
MICHEL, I
机构：
[1] Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-5170 Jülich
来源：
APPLIED SURFACE SCIENCE | 1993年 / 65-6卷
关键词：
D O I：
10.1016/0169-4332(93)90741-S
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Monocrystalline buried layers of CoSi2 in a Si(100) matrix have been grown by a new technique, named allotaxy. This is a two-step process, including the epitaxial growth of the Si host matrix with CoSi2 precipitates and a high-temperature anneal. Si/CoSi2/Si(100) heterostructures of different thicknesses were produced using various growth parameters and annealing temperatures and were characterized by RBS, ion channeling, TEM, X-ray diffraction and resistivity measurements. The quality of the produced epitaxial buried CoSi2 layers is comparable with the best layers produced by ion-beam synthesis.
引用
收藏
页码：697 / 703
页数：7
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