REDUCTION OF FAST INTERFACE STATES AND SUPPRESSION OF DRIFT PHENOMENA IN ARSENIC-STABILIZED METAL-INSULATOR-INP STRUCTURES

被引:33
作者
BLANCHET, R
VIKTOROVITCH, P
CHAVE, J
SANTINELLI, C
机构
关键词
D O I
10.1063/1.95500
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:761 / 763
页数:3
相关论文
共 16 条
[1]  
BLANCHET R, 1983, P INT C INSULATING F, P130
[2]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J].
CHENG, KY ;
CHO, AY ;
WAGNER, WR ;
BONNER, WA .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1015-1021
[3]   ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J].
DAVIES, GJ ;
HECKINGBOTTOM, R ;
OHNO, H ;
WOOD, CEC ;
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :290-292
[4]  
DELHOMME BJ, 1979, P MEASUREMENT CONTRO, P6
[5]  
FURUKAWA Y, 1984, UNPUB JUN WORKSH DIE
[6]   METAL-INSULATOR-SEMICONDUCTOR DIODES FABRICATED ON INP, INGAASP, AND INGAAS [J].
KOBAYASHI, T ;
SHINODA, Y .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3339-3341
[7]   PROCESSING OF INP MIS DEVICES MONITORED VIA PHOTOLUMINESCENCE MEASUREMENTS [J].
KRAWCZYK, S ;
BAILLY, B ;
SAUTREUIL, B ;
BLANCHET, R ;
VIKTOROVITCH, P .
ELECTRONICS LETTERS, 1984, 20 (06) :255-256
[8]   INTERFACIAL CONSTRAINTS ON DEVICE PERFORMANCE [J].
LILE, DL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :496-503
[9]   N-CHANNEL INVERSION-MODE INP MISFET [J].
LILE, DL ;
COLLINS, DA ;
MEINERS, LG ;
MESSICK, L .
ELECTRONICS LETTERS, 1978, 14 (20) :657-659
[10]   ELECTRICAL-PROPERTIES OF AL2O3 AND A1PXOY DIELECTRIC LAYERS ON INP [J].
MEINERS, LG .
THIN SOLID FILMS, 1984, 113 (02) :85-92