GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES

被引：48

作者：

CHOI, HK

TSAUR, BY

METZE, GM

TURNER, GW

FAN, JCC

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 06期

关键词：

D O I：

10.1109/EDL.1984.25889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：207 / 208

页数：2

共 6 条

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FAN, JCC ;

GALE, RP ;

DAVIS, FM ;

FOLEY, GH .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1024-1027

[2] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J].

FUKUI, H .

BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03) :771-797

[3] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J].

GALE, RP ;

FAN, JCC ;

TSAUR, BY ;

TURNER, GW ;

DAVIS, FM .

ELECTRON DEVICE LETTERS, 1981, 2 (07) :169-171

[4] GAAS LIGHT-EMITTING-DIODES FABRICATED ON SIO2/SI WAFERS [J].

SHINODA, Y ;

NISHIOKA, T ;

OHMACHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L450-L451

[5] HETEROEPITAXY OF VACUUM-EVAPORATED GE FILMS ON SINGLE-CRYSTAL SI [J].

TSAUR, BY ;

GEIS, MW ;

FAN, JCC ;

GALE, RP .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :779-781

[6]

TSAUR BY, 1982, 16TH P IEEE PHOT SPE, P1143

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