GROWTH CONDITION STUDIES OF PSEUDOMORPHIC INGAAS/GAAS STRAINED LAYER STRUCTURES AND INGAAS/ALGAAS HIGH ELECTRON-MOBILITY TRANSISTOR LAYER PROPERTIES

被引:13
作者
WENG, SL
WEBB, C
ECKSTEIN, JN
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期
关键词
D O I
10.1116/1.584751
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:361 / 364
页数:4
相关论文
共 14 条
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