GROWTH CONDITION STUDIES OF PSEUDOMORPHIC INGAAS/GAAS STRAINED LAYER STRUCTURES AND INGAAS/ALGAAS HIGH ELECTRON-MOBILITY TRANSISTOR LAYER PROPERTIES

被引：13
作者：
WENG, SL
WEBB, C
ECKSTEIN, JN
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期
关键词：
D O I：
10.1116/1.584751
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：361 / 364
页数：4
相关论文
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