CALCIA-STABILIZED ZIRCONIA THIN-FILMS IN GAAS METAL-INSULATOR SEMICONDUCTOR TECHNOLOGY - REDUCTION OF GAAS NATIVE OXIDE

被引:10
作者
CROSET, M [1 ]
MERCANDALLI, LM [1 ]
SIEJKA, J [1 ]
机构
[1] ECOLE NORM ALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS 05,FRANCE
关键词
D O I
10.1016/0040-6090(83)90438-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:221 / 242
页数:22
相关论文
共 43 条
[1]   REDUCTION OF SURFACE-STATES ON GAAS BY THE PLASMA GROWTH OF OXYFLUORIDES [J].
AHRENKIEL, RK ;
KAZMERSKI, LL ;
IRELAND, PJ ;
JAMJOUM, O ;
RUSSELL, PE ;
DUNLAVY, D ;
WAGNER, RS ;
PATTILLO, S ;
JERVIS, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :434-437
[2]   PROPERTIES OF PLASMA OXYFLUORIDES GROWN ON GAAS [J].
AHRENKIEL, RK ;
KAZMERSKI, LL ;
JAMJOUM, O ;
RUSSELL, PE ;
IRELAND, PJ ;
WAGNER, RS .
THIN SOLID FILMS, 1982, 95 (04) :327-331
[3]   PRECISION ABSOLUTE THIN-FILM STANDARD REFERENCE TARGETS FOR NUCLEAR-REACTION MICROANALYSIS OF OXYGEN ISOTOPES .1. O-16 STANDARDS [J].
AMSEL, G ;
NADAI, JP ;
ORTEGA, C ;
RIGO, S ;
SIEJKA, J .
NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :705-712
[4]   7ICROANALYSIS BY DIRECT OBSERVATION OF NUCLEAR REACTIONS USING A 2 MEV VAN-DE-GRAAFF [J].
AMSEL, G ;
NADAI, JP ;
DARTEMAR.E ;
DAVID, D ;
GIRARD, E ;
MOULIN, J .
NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04) :481-&
[5]   OPTICAL-PROPERTIES OF GAAS AND ITS ELECTROCHEMICALLY GROWN ANODIC OXIDE FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
SCHWARTZ, GP ;
GUALTIERI, GJ ;
STUDNA, AA ;
SCHWARTZ, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :590-597
[6]   QUANTITATIVITY IN III-V COMPOUNDS BY LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) [J].
BARCZ, A ;
CROSET, M ;
MERCANDALLI, LM .
SURFACE SCIENCE, 1980, 95 (2-3) :511-526
[7]   SILICON-NITRIDE LAYERS ON GALLIUM-ARSENIDE BY LOW-ENERGY ION-BEAM SPUTTERING [J].
BRADLEY, LE ;
SITES, JR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :189-192
[8]   PHYSICAL-PROPERTIES OF PLASMA-GROWN GAAS OXIDES [J].
CHANG, RPH ;
POLAK, AJ ;
ALLARA, DL ;
CHANG, CC ;
LANFORD, WA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03) :888-895
[9]   IMPROVEMENTS IN GAAS PLASMA-DEPOSITED SILICON-NITRIDE INTERFACE QUALITY BY PRE-DEPOSITION GAAS SURFACE-TREATMENT AND POST-DEPOSITION ANNEALING [J].
CLARK, MD ;
ANDERSON, CL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :453-456
[10]  
COHEN C, 1980, UNPUB