共 50 条
- [42] GENERAL ELECTRIC CENTRALIZES EFFORT ON GALLIUM-ARSENIDE TECHNOLOGY AVIATION WEEK & SPACE TECHNOLOGY, 1985, 122 (01): : 119 - &
- [43] INFLUENCE OF THE RATIO OF THE ARSENIC AND GALLIUM FLUXES DURING GROWTH BY MOLECULAR-BEAM EPITAXY ON THE LUMINESCENCE OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (10): : 1186 - 1188
- [44] DESORPTION OF THE EXCESS GALLIUM ATOMS AT THE SURFACE OF GALLIUM-ARSENIDE AND APPLICATION TO ATOMIC LAYER EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (02): : L287 - L289
- [45] OXIDE DISSOLUTION DURING THE ANODIZATION OF GALLIUM-ARSENIDE SOVIET ELECTROCHEMISTRY, 1989, 25 (03): : 362 - 364
- [46] PHOTON TRANSFER OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (01): : 41 - 43
- [47] PHOTON TRANSFER OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 526 - 529
- [48] FORMATION OF GALLIUM INTERSTITIALS DURING ZINC DIFFUSION INTO GALLIUM-ARSENIDE PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 43 (05): : 1299 - 1314
- [50] INVESTIGATION OF CONDUCTIVITY EFFECTIVE MASS IN COMPENSATED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 370 - 371