HIGH DEPTH TO WIDTH ASPECT RATIOS IN THICK POSITIVE PHOTORESIST LAYERS USING NEAR UV LITHOGRAPHY

被引：22

作者：

ENGELMANN, G

REICHL, H

机构：

[1] Technologien der Mikroperipherik, Technische Universität Berlin, TIB 4/2-1, Gustav-Meyer-Allee 25

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90062-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conventional lithography using liquid positive photoresist leads to mask structures of considerable thickness and resolution. The process is sketched and its present limits are documented. Applications for the fabrication of microstructures are stated.

引用

页码：303 / 306

页数：4