INTERFACE ABRUPTNESS AND DISSOLUTION-INDUCED DAMAGE IN LPE INGAASP HETEROSTRUCTURES

被引:15
作者
BRUNEMEIER, PE [1 ]
HSIEH, KC [1 ]
DEPPE, DG [1 ]
BROWN, JM [1 ]
HOLONYAK, N [1 ]
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
关键词
D O I
10.1016/0022-0248(85)90380-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:705 / 710
页数:6
相关论文
共 21 条
[1]   DIRECT OBSERVATION OF LATTICE DISTORTION IN A STRAINED-LAYER SUPER-LATTICE [J].
BROWN, JM ;
HOLONYAK, N ;
LUDOWISE, MJ ;
DIETZE, WT ;
LEWIS, CR .
APPLIED PHYSICS LETTERS, 1983, 43 (09) :863-865
[2]   INHOMOGENEITY OF LIQUID-PHASE-EPITAXIAL INGAASP LATTICE MATCHED ON INP - EFFECTS OF TRANSIENT GROWTH [J].
BRUNEMEIER, PE ;
ROTH, TJ ;
HOLONYAK, N ;
STILLMAN, GE .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1707-1716
[3]   HIGH-UNIFORMITY LIQUID-PHASE EPITAXIAL INGAASP (LAMBDA=1.3-MU-M) [J].
BRUNEMEIER, PE ;
ROTH, TJ ;
HOLONYAK, N ;
STILLMAN, GE .
JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) :484-486
[4]   WAVELENGTH MODIFICATION OF ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS BY LAYER INTERDIFFUSION [J].
CAMRAS, MD ;
HOLONYAK, N ;
BURNHAM, RD ;
STREIFER, W ;
SCIFRES, DR ;
PAOLI, TL ;
LINDSTROM, C .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5637-5641
[5]   STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J].
CAMRAS, MD ;
BROWN, JM ;
HOLONYAK, N ;
NIXON, MA ;
KALISKI, RW ;
LUDOWISE, MJ ;
DIETZE, WT ;
LEWIS, CR .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6183-6189
[6]   DETERMINATION OF THE VALENCE-BAND DISCONTINUITY OF INP-IN1-XGAXP1-ZASZ (X-0.13,Z-0.29) BY QUANTUM-WELL LUMINESCENCE [J].
CHIN, R ;
HOLONYAK, N ;
KIRCHOEFER, SW ;
KOLBAS, RM ;
REZEK, EA .
APPLIED PHYSICS LETTERS, 1979, 34 (12) :862-864
[7]   INTERFACE GRADING IN INGAASP LIQUID-PHASE EPITAXIAL HETEROSTRUCTURES [J].
COOK, LW ;
FENG, M ;
TASHIMA, MM ;
BLATTNER, RJ ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1980, 37 (02) :173-175
[8]   AUGER PROFILE STUDY OF THE INFLUENCE OF LATTICE MISMATCH ON THE LPE INGAASP-INP HETEROJUNCTION INTERFACE [J].
FENG, M ;
COOK, LW ;
TASHIMA, MM ;
STILLMAN, GE ;
BLATTNER, RJ .
APPLIED PHYSICS LETTERS, 1979, 34 (10) :697-699
[9]   LATTICE-CONSTANT, BANDGAP, THICKNESS, AND SURFACE-MORPHOLOGY OF INGAASP-INP LAYERS GROWN BY STEP-COOLING, EQUILIBRIUM-COOLING, SUPERCOOLING AND 2-PHASE-SOLUTION GROWTH TECHNIQUES [J].
FENG, M ;
COOK, LW ;
TASHIMA, MM ;
STILLMAN, GE .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) :241-280
[10]   N+-INP GROWTH ON INGAAS BY LIQUID-PHASE EPITAXY [J].
GROVES, SH ;
PLONKO, MC .
APPLIED PHYSICS LETTERS, 1981, 38 (12) :1003-1004