PRESSURE-DEPENDENCE OF SHALLOW BOUND-STATES IN GALLIUM-ARSENIDE

被引：220
作者：
WOLFORD, DJ
BRADLEY, JA
机构：
来源：
SOLID STATE COMMUNICATIONS | 1985年 / 53卷 / 12期
关键词：
D O I：
10.1016/0038-1098(85)90882-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1069 / 1076
页数：8
相关论文
共 41 条
[1]   RESONANT STATES FOR A REALISTIC IMPURITY PROBLEM IN CRYSTALS - DISCUSSION OF L-BANDS IN ALKALI HALIDES [J].
ALTARELL.M ;
IADONISI, G .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B, 1971, B 5 (01) :36-&
[2]   INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].
ASHEN, DJ ;
DEAN, PJ ;
HURLE, DTJ ;
MULLIN, JB ;
WHITE, AM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053
[3]   GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].
ASPNES, DE .
PHYSICAL REVIEW B, 1976, 14 (12) :5331-5343
[4]  
BASSANI F, 1975, ELECTRONIC STATES OP, P244
[5]   CHARACTERIZATION OF DONORS IN GAAS EPITAXIAL-FILMS BY FAR-INFRARED PHOTOCONDUCTIVE TECHNIQUES [J].
COOKE, RA ;
HOULT, RA ;
KIRKMAN, RF ;
STRADLING, RA .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (06) :945-953
[6]   ELECTROLUMINESCENCE AND ELECTRICAL PROPERTIES OF HIGH-PURITY VAPOR-GROWN GAP [J].
CRAFORD, MG ;
GROVES, WO ;
HERZOG, AH ;
HILL, DE .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2751-+
[7]   ABSORPTION AND LUMINESCENCE OF EXCITONS AT NEUTRAL DONORS IN GALLIUM PHOSPHIDE [J].
DEAN, PJ .
PHYSICAL REVIEW, 1967, 157 (03) :655-&
[8]  
DOLLINGER G, 1964, P INT C LATTICE DYNA, P19
[9]   Electrical properties of the GaAs X-1C minima at low electric fields from a high-pressure experiment [J].
Fitt, G. D. ;
Lees, J. .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4144-4160
[10]   HYDROSTATIC-PRESSURE DEPENDENCE OF BOUND EXCITONS IN GAP [J].
GIL, B ;
BAJ, M ;
CAMASSEL, J ;
MATHIEU, H ;
LAGUILLAUME, CB ;
MESTRES, N ;
PASCUAL, J .
PHYSICAL REVIEW B, 1984, 29 (06) :3398-3407
12345