CHEMICAL VAPOR-DEPOSITION OF AL2O3 THIN-FILMS UNDER REDUCED PRESSURES

被引：55

作者：

SARAIE, J

KOWN, J

YODOGAWA, Y

机构：

[1] Kyoto Inst of Technology, Coll of, Technology, Kyoto, Jpn, Kyoto Inst of Technology, Coll of Technology, Kyoto, Jpn

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 04期

关键词：

DIELECTRIC PROPERTIES - ELECTRIC CONDUCTIVITY;

D O I：

10.1149/1.2113979

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Al//2O//3 thin films were deposited by reduced-pressure CVD using aluminum tri-isopropoxide as a source. The dependence of the growth rate on the substrate temperature and the source gas supply was determined. The activation energy of the decomposition reactions was determined to be 18 kcal/mol. The electrical resistivity and the dielectric properties are characterized. The origin of the frequency dispersion in the sample prepared under the surface reaction limited conditions are discussed.

引用

页码：890 / 892

页数：3

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