GAINP/ALINP QUANTUM WELL STRUCTURES AND DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS

被引：47
|
作者：
HAYAKAWA, T
TAKAHASHI, K
HOSODA, M
YAMAMOTO, S
HIJIKATA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 08期
关键词：
D O I：
10.1143/JJAP.27.L1553
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L1553 / L1555
页数：3
相关论文
共 50 条
  • [1] GaInP/AlInP quantum well structures and double heterostructure lasers grown by molecular beam epitaxy on (100) GaAs
    Hayakawa, Toshiro
    Takahashi, Kosei
    Hosoda, Masahiro
    Yamamoto, Saburo
    Hijikata, Toshiki
    Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (08):
  • [2] GAINP AND ALINP GROWN BY ELEMENTAL SOURCE MOLECULAR-BEAM EPITAXY
    VARRIANO, JA
    KOCH, MW
    JOHNSON, FG
    WICKS, GW
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (02) : 195 - 198
  • [3] 600-NM-RANGE GAINP/ALINP STRAINED-QUANTUM-WELL LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    NOMURA, I
    KISHINO, K
    KIKUCHI, A
    KANEKO, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 804 - 810
  • [4] HIGH-OPTICAL-QUALITY GAINP AND GAINP AIINP DOUBLE HETEROSTRUCTURE LASERS GROWN ON GAAS SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    KIKUCHI, A
    KISHINO, K
    KANEKO, Y
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) : 4557 - 4559
  • [5] SHORT WAVELENGTH (VISIBLE) GAAS QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    WOODBRIDGE, K
    BLOOD, P
    FLETCHER, ED
    HULYER, PJ
    APPLIED PHYSICS LETTERS, 1984, 45 (01) : 16 - 18
  • [6] STUDY OF ALINP AND GAINP GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY (GSMBE)
    NAKAJIMA, M
    TAKAMORI, A
    YOKOTSUKA, T
    UCHIYAMA, K
    ABE, T
    JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) : 116 - 123
  • [7] AlInP-AlGaInP quantum-well lasers grown by molecular beam epitaxy
    Tukiainen, Antti
    Toikkanen, Lauri
    Haavisto, Matti
    Erojarvi, Vesa
    Rimpilainen, Ville
    Viheriala, Jukka
    Pessa, Markus
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (21-24) : 2257 - 2259
  • [8] 600-nm-Range GaInP/AlInP strained quantum well lasers grown by gas source molecular beam epitaxy
    Nomura, Ichirou
    Kishino, Katsumi
    Kikuchi, Akihiko
    Kaneko, Yawara
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (1 B): : 804 - 810
  • [9] HGCDTE DOUBLE HETEROSTRUCTURE DIODE-LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    ZUCCA, R
    ZANDIAN, M
    ARIAS, JM
    GIL, RV
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1587 - 1593
  • [10] THE RELIABILITY OF (ALGA)AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    TSANG, WT
    HARTMAN, RL
    SCHWARTZ, B
    FRALEY, PE
    HOLBROOK, WR
    APPLIED PHYSICS LETTERS, 1981, 39 (09) : 683 - 685
12345