GAINP/ALINP QUANTUM WELL STRUCTURES AND DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS

被引:47
作者
HAYAKAWA, T
TAKAHASHI, K
HOSODA, M
YAMAMOTO, S
HIJIKATA, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 08期
关键词
D O I
10.1143/JJAP.27.L1553
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:L1553 / L1555
页数:3
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共 25 条
[1]   ELECTROREFLECTANCE AND BAND-STRUCTURE OF GAXIN1-XP ALLOYS [J].
ALIBERT, C ;
CHEVALLI.J ;
BORDURE, G ;
LAUGIER, A .
PHYSICAL REVIEW B, 1972, 6 (04) :1301-&
[2]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES [J].
ASAHI, H ;
KAWAMURA, Y ;
NAGAI, H .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6958-6964
[3]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS [J].
ASAHI, H ;
KAWAMURA, Y ;
NAGAI, H .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4928-4931
[4]   HIGH-POWER (1.4W) ALGAINP GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE VISIBLE (LAMBDA-APPROXIMATELY-658-NM) LASER [J].
BOUR, DP ;
SHEALY, JR .
APPLIED PHYSICS LETTERS, 1987, 51 (21) :1658-1660
[5]  
CASEY HC, 1978, HETEROSTRUCTURE LA A, P192
[6]  
CASEY HC, 1978, HETEROSTRUCTURE LASE, pCH3
[7]   INTERFACE DISORDER IN GAAS ALGAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY ON 0.5-DEGREES-MISORIENTED (111)B SUBSTRATES [J].
HAYAKAWA, T ;
KONDO, M ;
MORITA, T ;
TAKAHASHI, K ;
SUYAMA, T ;
YAMAMOTO, S ;
HIJIKATA, T .
APPLIED PHYSICS LETTERS, 1987, 51 (21) :1705-1707
[8]   EFFECT OF GROUP V/III FLUX RATIO ON THE RELIABILITY OF GAAS/AL0.3GA0.7AS LASER-DIODES PREPARED BY MOLECULAR-BEAM EPITAXY [J].
HAYAKAWA, T ;
TAKAHASHI, K ;
SUYAMA, T ;
KONDO, M ;
YAMAMOTO, S ;
HIJIKATA, T .
APPLIED PHYSICS LETTERS, 1988, 52 (04) :252-254
[9]  
HAYAKAWA T, 1988, JPN J APPL PHYS, V27
[10]   MOCVD GROWTH OF (ALXGA1-X)YIN1-YP AND DOUBLE HETEROSTRUCTURES FOR VISIBLE-LIGHT LASERS [J].
HINO, I ;
SUZUKI, T .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :483-489