PROFILE ESTIMATION OF HIGH-CONCENTRATION ARSENIC OR BORON-DIFFUSION IN SILICON

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作者：

WANG, WS

LO, YH

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IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 12期

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TM [电工技术]; TN [电子技术、通信技术];

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0808 ; 0809 ;

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页码：1828 / 1831

页数：4

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[1] AMES WF, 1965, NONLINEAR PARTIAL DI, V1
[2] MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS
ANTONIADIS, DA
DUTTON, RW
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 412 - 422
[3] PROFILE ESTIMATION OF HIGH-CONCENTRATION ARSENIC DIFFUSIONS IN SILICON
FAIR, RB
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1278 - &
[4] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT
FAIR, RB
TSAI, JCC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1107 - 1118
[5] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON
FAIR, RB
WEBER, GR
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279
[6] PROFILE PARAMETERS OF IMPLANTED-DIFFUSED ARSENIC LAYERS IN SILICON
FAIR, RB
TSAI, JCC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 583 - 586
[7] CORRECTION
FAIR, RB
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 536 - 536
[8] COMPARISON OF THAIS THEORY WITH EXPERIMENTAL BORON DOPING PROFILES IN SILICON, DIFFUSED FROM BORON-NITRIDE SOURCES
FROHMADER, KP
BAUMBAUER, L
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (12) : 1263 - 1265
[9] A SIMPLE-MODEL FOR THE DEPOSITION OF BORON IN SILICON BY USING A BN DIFFUSION SOURCE
GUO, SF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) : 2506 - 2509
[10] A MODEL FOR BORON DEPOSITION IN SILICON USING A BBR3 SOURCE
GUO, SF
CHEN, WS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) : 1592 - 1596