PROFILE ESTIMATION OF HIGH-CONCENTRATION ARSENIC OR BORON-DIFFUSION IN SILICON

被引：0

作者：

WANG, WS

LO, YH

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 12期

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1828 / 1831

页数：4

共 17 条

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[9] A SIMPLE-MODEL FOR THE DEPOSITION OF BORON IN SILICON BY USING A BN DIFFUSION SOURCE [J].

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[10] A MODEL FOR BORON DEPOSITION IN SILICON USING A BBR3 SOURCE [J].

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