SILICON OXYGEN COMPLEXES CONTAINING 3 OXYGEN-ATOMS AS THE DOMINANT THERMAL DONOR SPECIES IN HEAT-TREATED OXYGEN-CONTAINING SILICON

被引:24
作者
OEHRLEIN, GS
机构
关键词
D O I
10.1063/1.332728
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5453 / 5455
页数:3
相关论文
共 7 条
[1]   INFLUENCE OF OXYGEN ON SILICON RESISTIVITY [J].
CAZCARRA, V ;
ZUNINO, P .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4206-4211
[2]   OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON [J].
GOSELE, U ;
TAN, TY .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02) :79-92
[3]   DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J].
GRAFF, K ;
GRALLATH, E ;
ADES, S ;
GOLDBACH, G ;
TOLG, G .
SOLID-STATE ELECTRONICS, 1973, 16 (08) :887-893
[4]   MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].
KAISER, W ;
FRISCH, HL ;
REISS, H .
PHYSICAL REVIEW, 1958, 112 (05) :1546-1554
[5]  
OEHRLEIN GS, UNPUB DEFECTS SEMICO
[6]  
PAJOT B, 1982, UNPUB 16TH INT C PHY
[7]   ELECTRICAL AND INFRARED SPECTROSCOPIC INVESTIGATIONS OF OXYGEN-RELATED DONORS IN SILICON [J].
WRUCK, D ;
GAWORZEWSKI, P .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (02) :557-564