DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING

被引：137

作者：

JACOB, G ^{[1
]}

DUSEAUX, M ^{[1
]}

FARGES, JP ^{[1
]}

VANDENBOOM, MMB ^{[1
]}

ROKSNOER, PJ ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 61卷 / 02期

关键词：

D O I：

10.1016/0022-0248(83)90383-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：417 / 424

页数：8

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[2] THE GROWTH OF DISLOCATION-FREE GE-DOPED INP [J].

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[8] EFFECT OF DOPING ON FORMATION OF DISLOCATION-STRUCTURE IN SEMICONDUCTOR CRYSTALS [J].

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[9]

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[10]

ROKSNOER PJ, COMMUNICATION

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